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PTF 10100 165 Watts, 860-900 MHz LDMOS Field Effect Transistor
Description
The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. * *
* * * *
INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 165 Watts - Power Gain = 13.0 dB Typ - Drain Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% lot traceability
Typical Output Power & Efficiency vs. Input Power
180 60 Efficiency
Output Power (Watts)
Efficiency (%)
140
45
100
30
A-12 3456 9917
1010 0
VDD = 28.0 V
60 Output Power 20 0 1 2 3 4 5 6 7 8 0
IDQ = 1.8 A Total f = 880 MHz
15
Input Power (Watts)
Package 20250
Maximum Ratings
Parameter
Drain-Source Voltage (1) Gate-Source Voltage (1) Operating Junction Temperature Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C)
(1) per side
Symbol
VDSS VGS TJ PD TSTG RqJC
Value
65 20 200 500 2.85 -40 to +150 0.35
Unit
Vdc Vdc C Watts W/C C C/W
1
PTF 10100
Electrical Characteristics (per side) (100% Tested)
Characteristic
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance
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Conditions
VGS = 0 V, ID = 5 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A
Symbol
V(BR)DSS IDSS VGS(th) gfs
Min
65 -- -- --
Typ
-- -- 4.3 2.5
Max
-- 1.0 -- --
Units
Volts mA Volts Siemens
RF Specifications (100% Tested)
Characteristic
Gain (VDD = 28 V, POUT = 165 W, IDQ = 1.8 A Total, f = 894 MHz) Power Output at 1 dB Compression (VDD = 28 V, ICQ = 1.8 A Total, f = 880 MHz) Drain Efficiency (VDD = 28 V, POUT = 165 W, IDQ = 1.8 A Total, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 165 W(PEP), IDQ = 1.8 A Total, f = 893.9, 894 MHz--all phase angles at frequency of test)
Symbol
Gps P-1dB h Y
Min
12.0 165 45 --
Typ
13.0 180 50 --
Max
-- -- -- 10:1
Units
dB Watts % --
Typical Performance
Typical POUT (at P-1dB), Gain vs. Frequency
Output Power & Efficiency
18 Output Power (W ) 16 175 225
Broadband Test Fixture Performance
16 Efficiency (%) 50 14 60
Gain (dB)
Gain
40
Gain
VDD = 28 V
14 Gain (dB) 12 Efficiency (%) 10 865 870 875 880 885 890 25 895 75
IDQ = 1.8 A Total
125
12
VDD = 28 V IDQ = 1.8 A Total POUT = 165 W
Return Loss (dB)
30 -20 5 -10 10 -15 -20 0 -25 895
10
8 865
870
875
880
885
890
Frequency (MHz)
Frequency (MHz)
2
Return Loss
Efficiency
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Typical Performance
Output Power vs. Supply Voltage
200 -10
PTF 10100
Intermodulation Distortion vs. Output Power
VDD = 28 V
-20
Output Power (Watts)
180 160
ICQ = 1.8 A Total f1 = 880.0 MHz f2 = 880.1 MHz
3rd order
IMD (dBc)
30
140 120 100 80 60 40 18 20 22 24 26 28
-30 -40 -50 -60 30
IDQ =1.8 A Total f = 894 MHz
50
70
90
110
130
150
170
Supply Voltage (Volts)
Output Power (Watts-PEP)
Capacitance vs. Supply Voltage (per side) *
600 500 95 85
Cds & Cgs (pF)
Cgs
400 300 200 100 0 0 10 20 30 40
75
Cds
VGS = 0 V f = 1 MHz
55 45 35 25
Crss
15 5
Supply Voltage (Volts) *This part is internally matched. Measurements of the finished product will not yield these figures.
3
Crss (pF)
65
PTF 10100
Impedance Data
--- >
OR
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Z Source
RD G
D
Z Load
EN E R AT
D
- WAVELENGTHS
MHz 860 870 880 890 900
R 2.3 1.9 1.8 1.7 1.6
jX 1.6 0.8 0.3 0.1 -0.2
R 1.60 1.70 1.90 1.95 1.80
jX -1.1 -1.7 -2.1 -1.8 -1.5
TOW ARD LOAD G TH S
900 MHz 860 MHz
900 MHz
Z Load
0.1
Typical Scattering Parameters
(VDS = 28 V, ID = 2 A per side)
f (MHz)
300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500
S11 Mag
0.980 0.982 0.983 0.989 0.989 0.987 0.983 0.982 0.980 0.972 0.958 0.929 0.858 0.693 0.783 0.918 0.951 0.974 0.988 0.984 0.979 0.980 0.992 0.991 0.986
S21 Ang
-178 -179 -180 179 179 179 178 177 176 175 174 171 168 173 -170 -172 -175 -177 -178 -179 -180 180 180 179 178
S12 Ang
15.6 12.8 9.48 7.19 5.48 2.11 -0.90 -4.52 -10.2 -14.3 -19.9 -27.5 -42.4 -75.9 -125 -153 -167 -179 165 158 -154 179 166 156 149 4
W
EN AVE L
S22 Ang
-85.2 -85.3 -85.7 -85.3 -93.7 -74.5 -64.9 -68.5 -55.1 -88.5 -87.2 -105 -133 174 120 101 89.2 81.8 77.9 76.7 77.4 73.9 74.5 78.7 79.7
Mag
0.996 0.773 0.641 0.545 0.489 0.449 0.425 0.414 0.405 0.419 0.442 0.509 0.662 0.882 0.714 0.423 0.261 0.184 0.124 0.060 0.048 0.070 0.058 0.049 0.042
Mag
0.010 0.008 0.006 0.005 0.003 0.002 0.002 0.001 0.001 0.001 0.001 0.005 0.013 0.030 0.028 0.022 0.020 0.019 0.018 0.017 0.018 0.018 0.018 0.019 0.021
Mag
0.994 0.993 0.992 0.996 0.999 0.995 0.996 0.998 0.997 0.997 0.993 0.991 0.989 0.987 0.993 0.989 0.982 0.982 0.990 0.990 0.986 0.983 0.990 0.992 0.984
0.1
Frequency
Z Source W
Z Load W
0.0
0.1
G G
S
TO W A
Z Source
860 MHz
0.2
VDD = 28 V, IDQ = 1.8 A Total, POUT = 165 W
Z0 = 50 W
Ang
-177 -177 -178 -179 -179 -179 -179 -180 -180 180 180 179 179 179 179 179 179 178 178 178 178 178 177 178 178
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Test Circuit
PTF 10100
Schematic for f = 894 MHz
DUT C1-2 C3 C4 C5 C6-7, C10, C13-14, C18 C8, C11 C9, C12, C15, C19 C16, C17, C20, C21 C22 L1. L2 R1, R2, R4, R5 R3, R6 10100 15 pF, Capacitor ATC 100 B 0.6-6.0 pF, Variable Capacitor 0.35-3.5 pF, Variable Capacitor 1-9 pF, Variable Capacitor 33 pF, Capacitor ATC 100 B 10 mF, +10 V Tantalum 0.01 mF, Capacitor ATC 100 B 10 mF, +30 V Tantalum 11 pF, Capacitor ATC 100 B 4 Turn, #20 AWG, .120" I.D. 510 W Resistor 510 W Resistor
l1, l20 l2, l17 l3, l16 l4, l15 l5, l6 l7, l8 l9, l10 l11, l12 l13, l14
Circuit Board
50 W, .030 l 20 W, .089 l 9.6 W, .055 l 25 W, .500 l 25 W, .373 l 12.2 W, .062 l 13.0 W, .017 l 6.6 W, .059 l 9.6 W, .055 l .028" G200, er = 4.55 @ 1 MHz, AlliedSignal
5
PTF 10100
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Components Layout (not to scale)
Artwork (1 inch
)
Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434
1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower
Specifications subject to change without notice. L2 (c) 1998 Ericsson Inc. EUS/KR 1301-PTF 10100 Uen Rev. A 05-03-99
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